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| MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE CM400DU-24NFH IC ................................................................... 400A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 110 E2 G2 6 C2E1 E2 62 0.25 C1 15 (8.25) 80 G1 E1 CM (18.5) CIRCUIT DIAGRAM C2E1 E2 C1 4-6.5 MOUTING HOLES 3-M6 NUTS 25 93 0.25 18 14 7 18 14 7 18 14 4 2.8 25 21.5 2.5 18.25 0.5 0.5 0.5 0.5 7.5 29 +1.0 -0.5 21 LABEL 8.5 G1 E1 6 E2 G2 Feb.2004 4 MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC' (Note 3) Tj Tstg Viso -- -- -- (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25C TC' = 25C*4 Conditions (Note 2) (Note 2) (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Ratings 1200 20 400 800 400 800 1040 2500 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A A A W W C C V N*m N*m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Rth(j-c')R RG Parameter Collector cutoff current (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE1 = VGE2 = 15V RG = 0.78, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.78 Limits Typ. -- 6 -- 5.0 5.0 -- -- -- 1800 -- -- -- -- -- 16 -- -- -- 0.02 -- -- -- Max. 1 7.5 1.4 6.5 -- 63 5.3 1.2 -- 300 100 500 150 250 -- 3.5 0.12 0.23 -- 0.051*3 0.093*3 7.8 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W C/W Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC' measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. No short circuit capability is designed. Feb.2004 MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT IC (A) Tj = 25C 700 600 500 400 300 200 100 0 0 2 4 VGE=20 (V) 14 13 15 12 VCE = 10V 700 600 500 400 300 200 100 0 0 5 10 Tj = 25C Tj = 125C 15 20 11 10 9 8 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C IC = 800A 9 VGE = 15V 8 Tj = 25C Tj = 125C 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 COLLECTOR CURRENT IC (A) 8 6 IC = 400A 4 IC = 160A 2 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 Tj = 125C Tj = 25C 102 Cies 102 7 5 3 2 101 Coes Cres 100 101 0 1 2 3 4 5 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.2004 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 td(off) td(on) tf SWITCHING TIME (ns) 3 2 5 3 2 5 Irr 3 2 102 7 5 3 2 102 7 5 3 2 trr 102 7 tr 101 7 5 3 2 100 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = 15V RG = 0.78 Tj = 125C Inductive load 23 5 7 103 101 1 10 2 3 5 7 102 Conditions: 5 VCC = 600V VGE = 15V 3 RG = 0.78 2 Tj = 25C Inductive load 101 23 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25C 10-1 7 5 3 2 Single Pulse TC = 25C 10-1 7 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 10-2 7 5 3 Per unit base = 2 10-2 7 5 3 2 10-2 7 5 3 Per unit base = 2 10-2 7 5 3 2 Rth(j-c) = 0.12C/W 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 Rth(j-c) = 0.23C/W 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 400A VCC = 400V 15 VCC = 600V 10 5 0 0 500 1000 1500 2000 2500 GATE CHARGE QG (nC) Feb.2004 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25C 7 7 |
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